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參數(shù)資料
| 型號(hào)： | 2SJ338-Y(2-7B1B) |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-7B1B, SC-64, 3 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 138K |
| 代理商： | 2SJ338-Y(2-7B1B) |
2SJ338
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VDS = 0, VGS = ±20 V
—
±100
nA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0
180
—
V
Gatesource cutoff voltage
(Note 2)
V GS (OFF)
VDS = 10 V, ID = 10 mA
0.8
—
2.8
V
Drainsource saturation voltage
VDS (ON)
ID = 0.6 A, VGS = 10 V
—
1.2
3.0
V
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 0.3 A
—
0.7
—
S
Input capacitance
Ciss
VDS = 10 V, VGS = 0 , f = 1 MHz
—
210
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 , f = 1 MHz
—
90
—
Reverse transfer capacitance
Qrss
VDS = 10 V, VGS = 0 , f = 1 MHz
—
45
—
pF
Note 2: VGS (OFF) Classification
O: 0.8~1.6, Y: 1.4~2.8
This transistor is the electrostatic-sensitive device.
Please handle with caution.
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