參數(shù)資料
型號(hào): 2SJ349
元件分類: JFETs
英文描述: 20 A, 60 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-10R1B, SC-67, 3 PIN
文件頁數(shù): 1/6頁
文件大小: 387K
代理商: 2SJ349
2SJ349
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2πMOSV)
2SJ349
DCDC Converter, Relay Drive and Motor Drive
Applications
4-V gate drive
Low drainsource ON resistance
: RDS (ON) = 33 m (typ.)
High forward transfer admittance : |Yfs| = 20 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 60 V)
Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
60
V
Draingate voltage (RGS = 20 k)
VDGR
60
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
20
A
Drain current
Pulse(Note 1)
IDP
80
A
Drain power dissipation (Tc = 25°C)
PD
45
W
Single pulse avalanche energy
(Note 2)
EAS
800
mJ
Avalanche current
IAR
20
A
Repetitive avalanche energy (Note 3)
EAR
4.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
2.78
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.44 mH, RG = 25 , IAR = 20 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
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