參數(shù)資料
型號: 2SJ333S
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel MOS FET(P溝道MOSFET)
中文描述: 硅P溝道場效應(yīng)晶體管性(P溝道MOSFET的)
文件頁數(shù): 5/8頁
文件大?。?/td> 57K
代理商: 2SJ333S
2SJ333(L), 2SJ333(S)
5
5
–0.1 –0.2
Reverse Drain Current I (A)
10
500
200
100
50
20
–0.5 –1.0
–2
–5
–10
R
di / dt = 50 A / μs
V = 0, Ta = 25 °C
Body–Drain Diode Reverse
Recovery Time
10000
1000
100
0
–10
–20
–30
-40
–50
C
Drain to Source Voltage V (V)
3000
300
Ciss
Coss
Crss
V = 0
f = 1 MHz
Typical Capacitance vs.
Drain to Source Voltage
0
–20
–40
–60
–80
0
–8
–16
–24
–32
–40
Gate Charge Qg (nc)
D
D
0
–4
–8
–12
–16
–20
–100
G
G
DS
V
GS
V
V = –25 V
–10 V
V = –25 V
–10 V
I = –7 A
Dynamic Input Characteristics
500
200
100
50
20
10
5
–0.1 –0.2
–0.5
Drain Current I (A)
–1
–2
–5
–10
S
tf
r
d(off)
t
d(on)
t
V = –10 V, V = –30 V
PW = 5 μs, duty < 1 %
Switching Characteristics
相關(guān)PDF資料
PDF描述
2SJ337 Very High-Speed Switching Applications
2SJ339 Ultrahigh-Speed Switching Applications
2SJ340 Ultrahigh-Speed Switching Applications
2SJ350 Silicon P-Channel MOS FET
2SJ351 Silicon P-Channel MOS FET
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