參數(shù)資料
型號(hào): 2SJ323
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel MOS FET(P溝道MOSFET)
中文描述: 硅P溝道場(chǎng)效應(yīng)晶體管性(P溝道MOSFET的)
文件頁(yè)數(shù): 4/5頁(yè)
文件大?。?/td> 31K
代理商: 2SJ323
2SJ323
4
60
40
20
C
50
100
150
Case Temperature Tc (°C)
Power vs. Temperature Derating
0
Maximum Safe Operation Area
–500
–300
–100
–30
–0.5
–3
–1
–0.1 –0.3
Drain to Source Voltage V ( V )
–1
–3
–10 –30
–100
D
D
10 s
μ
i me b R (o)
D
DCOpeaion(Tc=25C
Ta = 25 °C
–10
3
1
0.3
0.1
0.03
0.01
10 μ
100 μ
1 m
10 m
Pulse Width PW (S)
N
100 m
1
10
s
γ
DM
P
PW
T
D =T
ch – c = 3.57 °C/W, Tc = 25 °C
θ γ θ
θ
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
Normalized Transient Thermal Impedance vs. Pulse Width
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