參數(shù)資料
型號(hào)： 2SJ323
廠商： Hitachi,Ltd.
英文描述： Silicon P-Channel MOS FET(P溝道MOSFET)
中文描述： 硅P溝道場效應(yīng)晶體管性（P溝道MOSFET的）
文件頁數(shù)： 3/5頁
文件大?。?/td> 31K
代理商： 2SJ323
2SJ323
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–60
—
—
V
I
D
= –10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
—
V
I
G
= ±200 μA, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±10
μA
V
GS
= ±16 V, V
DS
= 0
V
DS
= –50 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –15 A, V
GS
= –10 V*
I
D
= –15 A, V
GS
= –4 V*
I
D
= –15 A, V
DS
= –10 V*
V
DS
= –10 V, V
GS
= 0,
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
–250
μA
V
GS(off)
R
DS(on)
–1.0
—
–2.25
V
Static drain to source on state
—
0.033
0.043
S
1
resistance
—
0.045
0.06
1
Forward transfer admittance
|y
fs
|
Ciss
17
25
—
1
Input capacitance
—
3300
—
pF
Output capacitance
Coss
—
1500
—
pF
Reverse transfer capacitance
Crss
—
480
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
30
—
ns
I
D
= –15 A, V
GS
= –10 V,
R
L
= 2
Rise time
—
170
—
ns
Turn-off delay time
—
500
—
ns
Fall time
—
390
—
ns
Body to drain diode forward
voltage
—
–1.5
—
V
I
F
= –30 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
—
200
—
ns
I
F
= –30 A, V
= 0,
di
F
/dt = 50 A/μs
See characteristic curve of 2SJ280
相關(guān)PDF資料
PDF描述
2SJ326-Z GT 6C 4#16 2#8 PIN RECP LINE
2SJ326 Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0699-4 00; No. of Positions: 6; Connector Type: Panel; Contact Gender: Male; Contact Spacing (mm): 2; Terminal Pitch (mm): 2; Current Rating(Amps)(Max.): 2; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -30 to 85; General Description: In-line adapter; Both ends male contacts; Pin contact
2SJ330 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
2SJ331 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
2SJ332 Silicon P-Channel MOS FET(P溝道MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ324 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
2SJ324-AZ 制造商:Renesas Electronics 功能描述:Pch -30V -2A 250m@10V TO251 Bulk
2SJ324-Z 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 2A I(D) | TO-252VAR
2SJ324-Z-AZ 制造商:Renesas Electronics 功能描述:Pch -30V -2A 250m@10V TO252 Bulk
2SJ325 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Power Transistors
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