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參數(shù)資料
| 型號： | 2SJ319STL-E |
| 元件分類： | JFETs |
| 英文描述： | 3 A, 200 V, 2.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-63, DPAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 87K |
| 代理商： | 2SJ319STL-E |
2SJ319(L), 2SJ319(S)
Rev.2.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–5
0
–1
–2
–3
–4
0
–4
–8
–12
–16
–20
–5
0
–1
–2
–3
–4
0
–2–4–6–8
–10
Tc = –25°C
20
0
05
10
15
0
50
100
150
200
VDS = –10 V
Pulse Test
–10 V
–5 V
–8 V
–6 V
–4 V
VGS = –3.5 V
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–30
–10
–3
–1
–0.05
–0.1
–0.3
–1
–3
–10
–30
–100 –300 –500
–50
Ta = 25°C
PW
= 10
ms
(1
shot)
DC
Operation
(Tc
=
25°C)
1 ms
10
s
100
s
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–20
0
–4
–8
–12
–16
0
–4
–8
–12
–16
–20
Pulse Test
ID = –5 A
–1 A
–2 A
Drain Current
ID (A)
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
2
1
0.2
0.5
0.1
–0.5
–2
–0.2
–1
–5
–10
10
5
VGS = –10 V
Pulse Test
25°C
75°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ320 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ321 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-220FN |
| 2SJ322 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-220FN |
| 2SJ323 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220FN |
| 2SJ324 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
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