參數(shù)資料
型號: 2SJ319STL-E
元件分類: JFETs
英文描述: 3 A, 200 V, 2.3 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: SC-63, DPAK-3
文件頁數(shù): 2/8頁
文件大?。?/td> 87K
代理商: 2SJ319STL-E
2SJ319(L), 2SJ319(S)
Rev.2.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–200
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–3
A
Drain peak current
ID (pulse)
Note 1
–12
A
Body to drain diode reverse drain current
IDR
–3
A
Channel dissipation
Pch
Note 2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–200
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
±10
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
–100
A
VDS = –160 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
–2.0
–4.0
V
ID = –1 mA, VDS = –10 V
Static drain to source on state resistance
RDS (on)
1.7
2.3
ID = –2 A, VGS = –10 V
Note 3
Forward transfer admittance
|yfs|
1.0
1.7
S
ID = –2 A, VDS = –10 V
Note 3
Input capacitance
Ciss
330
pF
Output capacitance
Coss
130
pF
Reverse transfer capacitance
Crss
25
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
10
ns
Rise time
tr
30
ns
Turn-off delay time
td (off)
40
ns
Fall time
tf
30
ns
ID = –2 A
VGS = –10 V
RL = 15
Body to drain diode forward voltage
VDF
–1.15
V
IF = –3 A, VGS = 0
Body to drain diode reverse recovery time
trr
180
ns
IF = –3 A, VGS = 0
diF/dt = 50 A/
s
Note:
3. Pulse test
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