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參數(shù)資料
| 型號： | 2SJ222-E |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 100 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-67, TO-220FM, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 82K |
| 代理商： | 2SJ222-E |
2SJ222
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–100
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–20
A
Drain peak current
ID (pulse)
Note 1
–80
A
Body to drain diode reverse drain current
IDR
–20
A
Channel dissipation
Pch
Note 2
35
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–100
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
–250
A
VDS = –80 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
–1.0
—
–2.0
V
ID = –1 mA, VDS = –10 V
RDS (on)
—
0.12
0.16
ID = –10 A, VGS = –10 V
Note 3
Static drain to source on state resistance
RDS (on)
—
0.16
0.22
ID = –10 A, VGS = –4 V
Note 3
Forward transfer admittance
|yfs|
7.5
12
—
S
ID = –10 A, VDS = –10 V
Note 3
Input capacitance
Ciss
—
1800
—
pF
Output capacitance
Coss
—
680
—
pF
Reverse transfer capacitance
Crss
—
145
—
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
—
15
—
ns
Rise time
tr
—
115
—
ns
Turn-off delay time
td (off)
—
320
—
ns
Fall time
tf
—
170
—
ns
ID = –10 A
VGS = –10 V
RL = 3
Body to drain diode forward voltage
VDF
—
–1.05
—
V
IF = –20 A, VGS = 0
Body to drain diode reverse recovery time
trr
—
280
—
ns
IF = –20 A, VGS = 0
diF/dt = 50 A/
s
Note:
3. Pulse test
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|---|---|
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