- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33467 > 2SJ228 800 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SJ228 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 800 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | NMP, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 102K |
| 代理商： | 2SJ228 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:EN3813
2SJ228
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40199TH (KT)/D151MH, (KOTO) A8-7846 No.3813–1/4
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2087A
[2SJ228]
Features
Low ON resistance.
Ultrahigh-speed switching.
Low-voltage drive.
Meets radial taping.
C
Electrical Characteristics at Ta = 25C
1 : Source
2 : Drain
3 : Gate
SANYO : NMP
PW≤10μs, duty cycle≤1%
Continued on next page.
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
c
r
u
o
S
-
o
t
-
n
i
a
r
DV
S
D
0
6
–V
e
g
a
t
l
o
V
e
c
r
u
o
S
-
o
t
-
e
t
a
GV
S
G
5
1
±V
)
C
D
(
t
n
e
r
u
C
n
i
a
r
DID
8
.
0
–A
)
e
s
l
u
P
(
t
n
e
r
u
C
n
i
a
r
DI P
D
2
.
3
–A
n
o
i
t
a
p
i
s
i
D
r
e
w
o
P
e
l
b
a
w
o
ll
APD
1W
e
r
u
t
a
r
e
p
m
e
T
l
e
n
a
h
Ch
c
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
–
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
e
g
a
t
l
o
V
n
w
o
d
k
a
e
r
B
e
c
r
u
o
S
-
o
t
-
n
i
a
r
DV
S
D
)
R
B
(
ID
V
,
A
m
1
–
=
S
G
0
=0
6
–V
t
n
e
r
u
C
n
i
a
r
D
e
g
a
t
l
o
V
e
t
a
G
-
o
r
e
ZI
S
D
V S
D
V
,
V
0
6
–
=
S
G
0
=0
0
1
–A
t
n
e
r
u
C
e
g
a
k
a
e
L
e
c
r
u
o
S
-
o
t
-
e
t
a
GI
S
G
V S
G
V
,
V
2
1
±
=
S
D
0
=0
1
±A
e
g
a
t
l
o
V
f
o
t
u
CV
)
f
o
(
S
G
V S
D
I
,
V
0
1
–
=
D
A
m
1
–
=0
.
1
–0
.
2
–V
e
c
n
a
t
i
m
d
A
r
e
f
s
n
a
r
T
d
r
a
w
r
o
F|
s
f
y
|V S
D
I
,
V
0
1
–
=
D
A
m
0
4
–
=5
.
09
.
0S
e
c
n
a
t
s
i
s
e
R
e
t
a
t
S
-
N
O
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
c
i
t
a
t
S
R
)
n
o
(
S
D
ID
V
,
A
m
0
4
–
=
S
G
V
0
1
–
=9
.
02
.
1
Ω
R
)
n
o
(
S
D
ID
V
,
A
m
0
4
–
=
S
G
V
4
–
=2
.
16
.
1
Ω
6.9
0.6
0.5
4.5
1.0
0.9
2.5
1.45
1.0
0.45
4.0
1.0
2.54
123
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ229 | 1.6 A, 60 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ247 | 8 A, 100 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ248 | 8 A, 100 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ248 | 8 A, 100 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ258 | 12 A, 30 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ229 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ229_1 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ230 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ231 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ232 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。
