參數(shù)資料
型號: 2SJ215
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel MOS FET(P溝道MOSFET)
中文描述: 硅P溝道場效應(yīng)晶體管性(P溝道MOSFET的)
文件頁數(shù): 5/9頁
文件大小: 56K
代理商: 2SJ215
2SJ215
5
–5
–8
–20
Gate to Source Voltage V
GS
(V)
D
D
–4
–1
–4
–12
–16
0
–2
–3
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
–50 A
–20 A
I
D
= –10 A
1
–10
–100
Drain Current I
D
(A)
S
R
D
)
0.5
0.05
–5
–20
–50
0.02
0.1
0.2
Static Drain to Source on State
Resistance vs. Drain Current
Pulse Test
–2
0.01
–200
V
GS
= –4 V
–10 V
0.1
40
160
Case Temperature T
C
(°C)
S
R
D
)
0.08
0.02
0
80
120
0
–40
0.04
0.06
Static Drain to Source on State
Resistance vs. Temperature
Pulse Test
V
GS
= –4 V
V
GS
= –10 V
I
D
= –20 A
–10 A
–20 A
–10 A
I
D
= –50 A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ216 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SJ217 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET
2SJ217-E 制造商:Renesas Electronics Corporation 功能描述:
2SJ218 制造商:Renesas Electronics Corporation 功能描述:MOSFET P LOGIC TO-3PFM
2SJ218-E 制造商:Renesas Electronics Corporation 功能描述:MOSFET P LOGIC TO-3PFM