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參數(shù)資料
| 型號(hào)： | 2SJ175 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 29K |
| 代理商： | 2SJ175 |
2SJ175
4
30
20
10
0
50
100
150
Case Temperature T
C
(°C)
C
Power vs. Temperature Derating
–100
–10
–1.0
–0.1
–1.0
–10
–100
Drain to Source Voltage V
DS
(V)
D
D
Maximum Safe Operation Area
–30
–3
–0.3
–0.3
–3
–30
Ta = 25°C
10
μ
s
100
μ
1m
C
=25C
Operation in this area
is limited by R
DS(on)
3
Pulse Width PW (s)
γ
S
1.0
0.1
0.3
10
μ
0.03
0.01
100
μ
10 m
100 m
1
10
1 m
Normalized Transient Thermal Impedance vs. Pulse Width
T
PW
P
DM
D =
T
PW
θ
ch–c (t) =
γ
(t) ·
θ
ch–c
θ
ch–c = 5.0°C/W, T
C
= 25°C
T
C
= 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
1 Shot Pulse
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ176 | SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING |
| 2SJ191FA | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2A I(D) | TO-252VAR |
| 2SJ192FA | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ194FA | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 2A I(D) | TO-252VAR |
| 2SJ195FA | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ176 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING |
| 2SJ177 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SJ178 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
| 2SJ178(AZ) | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SJ179 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
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