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參數(shù)資料
| 型號： | 2SJ175 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 29K |
| 代理商： | 2SJ175 |
2SJ175
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
Pch*
–60
V
Gate to source voltage
±20
V
Drain current
–10
A
Drain peak current
1
–40
A
Body to drain diode reverse drain current
–10
A
Channel dissipation
2
25
W
Channel temperature
Tch
150
°C
Storage temperature
Notes 1. PW
≤
10 μs, duty cycle
≤
1%
2. Value at T
C
= 25°C
Tstg
–55 to +150
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ176 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING |
| 2SJ177 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SJ178 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
| 2SJ178(AZ) | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SJ179 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
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