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參數(shù)資料
| 型號： | 2SH17 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel IGBT |
| 中文描述： | 硅N溝道IGBT的 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 41K |
| 代理商： | 2SH17 |
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
———————————————————————————————————————————
Collector to emitter breakdown
V
(BR)CES
600
voltage
———————————————————————————————————————————
Zero gate voltage collector
I
CES
—
current
———————————————————————————————————————————
Gate to emitter leak current
I
GES
—
———————————————————————————————————————————
Gate to emitter cutoff current
V
GE(off)
3.0
———————————————————————————————————————————
Collector to emitter saturation
V
CE(sat)
1
—
voltage
———————————————————————————————————————————
Collector to emitter saturation
V
CE(sat)
2
—
voltage
———————————————————————————————————————————
Input capacitance
Cies
—
Symbol
Min
Typ
Max
Unit Test conditions
—
—
V
I
C
= 100 μA, V
GE
= 0
—
0.5
mA
V
CE
= 600 V, V
GE
= 0
—
±1
μA
V
GE
= ±20 V, V
CE
= 0
—
6.0
V
I
C
= 1 mA, VCE= 10 V
1.5
—
V
I
C
= 5 A, V
GE
= 15 V
2.0
2.6
V
I
C
= 10 A, V
GE
= 15 V
1000
—
pF
V
CE
= 10 V, V
GE
= 0,
f = 1 MHz
———————————————————————————————————————————
Switching time
t
r
—
————————————————
t
on
—
————————————————
t
f
—
————————————————
t
off
—
———————————————————————————————————————————
75
—
ns
IC= 10 A,
150
—
RL= 30
,
2000
—
VGE= ±15 V
2300
—
Rg = 50
2
2SH17
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SH18 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel IGBT |
| 2SH19 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel IGBT |
| 2SH20 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel IGBT |
| 2SH21 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel IGBT |
| 2SH22 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel IGBT |
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