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參數(shù)資料
| 型號(hào)： | 2SH21 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel IGBT |
| 中文描述： | 硅N溝道IGBT的 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 43K |
| 代理商： | 2SH21 |
Application
High speed power switching
Features
High speed switching
Low on saturation voltage
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
———————————————————————————————————————————
Collector to emitter voltage
V
CES
———————————————————————————————————————————
Gate to emitter voltage
V
GES
———————————————————————————————————————————
Collector current
I
C
———————————————————————————————————————————
Collector peak current
ic(peak)
———————————————————————————————————————————
Collector dissipation
P
C
*
———————————————————————————————————————————
Channel temperature
T
j
———————————————————————————————————————————
Storage temperature
Tstg
———————————————————————————————————————————
* Value at Tc = 25°C
Symbol
Ratings
Unit
600
V
±20
V
50
A
100
A
150
W
150
°C
–55 to +150
°C
1. Gate
2. Collector
3. Emitter
TO–3P
1
2
3
1
2
3
1
2SH21
Silicon N-Channel IGBT
1st. Edition
Feb. 1995
ADE–208–294 (Z)
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PDF描述 |
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| 2SH22 | Silicon N-Channel IGBT |
| 2SH26 | Silicon N Channel IGBT High Speed Power Switching |
| 2SH27 | Silicon N Channel IGBT High Speed Power Switching |
| 2SH28 | Silicon N Channel IGBT High Speed Power Switching |
| 2SH29 | Silicon N Channel IGBT High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SH22 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel IGBT |
| 2SH26 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH27 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH28 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH29 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel IGBT High Speed Power Switching |
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