參數(shù)資料
型號: 2SD862
廠商: 永盛國際集團(tuán)
英文描述: Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)
中文描述: 硅外延平面晶體管(一般)的說明
文件頁數(shù): 1/1頁
文件大?。?/td> 63K
代理商: 2SD862
GENERAL DESCRIPTION
Silicon NPN high frequency, Low Vce(sat) middle
power transistors in a plastic envelope, primarily for
use in audio and general purpose
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0V
TYP
-
-
-
-
-
-
1.5
MAX
20
20
2
UNIT
V
V
A
A
W
V
V
T
mb
I
C
= 1.5A; I
B
= 0.15A
I
F
= 1.5A
25
10
0.5
2.0
-
s
SYMBOL
V
CESM
V
CEO
V
EBO
I
C
I
B
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0V
MIN
-
-
MAX
20
20
6
2
0.5
10
150
150
UNIT
V
V
V
A
A
W
-
-
-
Tmb
25
-55
-
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
f
T
C
c
t
on
t
s
t
f
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
CONDITIONS
V
CB
=20V
V
EB
=5V
I
C
=1mA
I
C
= 1.5A; I
B
= 0.15A
I
C
= 100mA; V
CE
= 2V
I
C
= 0.5A; V
CE
= 12V
V
CB
= 10V
TYP
-
-
20
-
60
80
75
MAX
0.1
0.2
UNIT
mA
mA
V
V
0.5
400
-
-
MHz
pF
us
us
us
ELECTRICAL CHARACTERISTICS
TO-126
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
2SD862
Silicon Epitaxial Planar Transistor
相關(guān)PDF資料
PDF描述
2SD864 Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管)
2SD864K Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管)
2SD879 1.5V, 3V Strobe Applications
2SD886 TRANSISTOR (NPN)
2SD886-TO-126 TRANSISTOR (NPN)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD863 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Voltage Regulator, Relay Lamp Driver Electrical Equipment Applications
2SD863D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | TO-92VAR
2SD863E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | TO-92VAR
2SD863F 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | TO-92VAR
2SD864 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Darlington Power Transistor