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參數(shù)資料
| 型號(hào)： | 2SD886-TO-126 |
| 廠(chǎng)商： | 江蘇長(zhǎng)電科技股份有限公司 |
| 英文描述： | TRANSISTOR (NPN) |
| 中文描述： | 晶體管（NPN）的 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 78K |
| 代理商： | 2SD886-TO-126 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
2SD886
TRANSISTOR (NPN)
FEATURES
Power dissipation
P
CM:
1 W (Tamb=25
℃
)
Collector current
I
CM:
3 A
Collector-base voltage
V
(BR)CBO
: 50 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
℃
to +150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=
100
μA, I
E
=0
50
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=
5
mA, I
B
=0
50
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=
100
μA, I
C
=0
5
V
Collector cut-off current
I
CBO
V
CB
=
50
V, I
E
=0
1
μA
Emitter cut-off current
I
EBO
V
EB
=
3
V, I
C
=0
1
μA
h
FE(1)
V
CE
=
2
V, I
C
=
20
mA
100
DC current gain
h
FE(2)
V
CE
=
2
V, I
C
=
1
A
100
400
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
2
A, I
B
=
200
mA
0.5
V
Base-emitter saturation voltage
V
BE(sat)
I
C
=
2
A, I
B
=
200
mA
2
V
Transition frequency
f
T
V
CE
=5V, I
C
=
100
mA
80
MHz
Collector output capacitance
C
ob
V
CB
=
10
V, I
E
=0, f=
1
MHz
45
pF
1 2 3
TO—126
1. EMITTER
2. COLLECTOR
3. BASE
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