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參數(shù)資料
| 型號： | 2SD667 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 32K |
| 代理商： | 2SD667 |
2SD667, 2SD667A
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
2SD667
2SD667A
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
P
C
Tj
120
120
V
Collector to emitter voltage
80
100
V
Emitter to base voltage
5
5
V
Collector current
1
1
A
Collector peak current
2
2
A
Collector power dissipation
0.9
0.9
W
Junction temperature
150
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
–50 to +150
Electrical Characteristics
(Ta = 25°C)
2SD667
2SD667A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
120
—
—
120
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
80
—
—
100
—
—
V
I
C
= 1 mA, R
BE
=
∞
Emitter to base
breakdown voltage
V
(BR)EBO
5
—
—
5
—
—
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
—
—
10
—
—
10
μ
A
V
CB
= 100 V, I
E
= 0
V
CE
= 5 V,
I
C
= 150 mA*
2
V
CE
= 5 V,
I
C
= 500 mA*
2
I
C
= 500 mA,
I
B
= 50 mA*
2
V
CE
= 5 V,
I
C
= 150 mA*
2
V
CE
= 5 V,
I
C
= 150 mA*
2
V
= 10 V, I
E
= 0,
f = 1 MHz
DC current transfer ratio h
FE1
*
1
60
—
320
60
—
200
h
FE2
30
—
—
30
—
—
Collector to emitter
saturation voltage
V
CE(sat)
—
—
1
—
—
1
V
Base to emitter voltage
V
BE
—
—
1.5
—
—
1.5
V
Gain bandwidth product f
T
—
140
—
—
140
—
MHz
Collector output
capacitance
Notes: 1. The 2SD667 and 2SD667A are grouped by h
FE1
as follows.
2. Pulse test
B
C
Cob
—
12
—
—
12
—
pF
D
2SD667
60 to 120
100 to 200
160 to 320
2SD667A
60 to 120
100 to 200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD667A | Silicon NPN Epitaxial |
| 2SD668 | Silicon NPN Epitaxial(外延NPN晶體管) |
| 2SD668A | Silicon NPN Epitaxial(外延NPN晶體管) |
| 2SD669A | Silicon NPN Epitaxial |
| 2SD669 | Silicon NPN Epitaxial(外延NPN晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD667A | 制造商:DCCOM 制造商全稱:Dc Components 功能描述:TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR |
| 2SD667AB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SD667ABTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SD667AC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-92VAR |
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