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參數(shù)資料
| 型號： | 2SD661 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) |
| 中文描述： | 100 mA, 35 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-71, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 2SD661 |
1
Transistor
2SD661, 2SD661A
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
I
Features
G
Low noise voltage NV.
G
High foward current transfer ratio h
FE
.
G
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
6.9
±
0.1
0.55
±
0.1
0.45
±
0.05
1
±
0
1
2.5
±
0.1
1.0
1.5
1.5 R0.9
R0.9
R07
0
0.85
3
±
0
2
±
0
2
±
0
1
±
0
4
±
0
4
±
0
2.5
2.5
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
35
55
35
55
7
200
100
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
2SD661
2SD661A
2SD661
2SD661A
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
NV
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= –2mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100k
, Function = FLAT
min
35
55
35
55
7
210
typ
200
max
0.1
1
650
1
150
Unit
μ
A
μ
A
V
V
V
V
MHz
mV
*
h
FE
Rank classification
Rank
R
S
T
h
FE
210 ~ 340
290 ~ 460
360 ~ 650
2SD661
2SD661A
2SD661
2SD661A
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| 2SD662 | Silicon NPN epitaxial planer type(For high breakdown voltage general amplification) |
| 2SD662B | Silicon NPN epitaxial planer type(For high breakdown voltage general amplification) |
| 2SD687 | SILICON NPN EPITAXIAL TYPE(PCT PROCESS) |
| 2SD688 | SILICON NPN EPITAXIAL (PCT PROCESS) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD661A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) |
| 2SD662 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD662B | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD663 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 500V 6A 80W BEC |
| 2SD664 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 7A I(C) | TO-66 |
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