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參數(shù)資料
| 型號： | 2SD662B |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For high breakdown voltage general amplification) |
| 中文描述： | 70 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 39K |
| 代理商： | 2SD662B |
1
Transistor
2SD662, 2SD662B
Silicon NPN epitaxial planer type
For high breakdown voltage general amplification
I
Features
G
High collector to emitter voltage V
CEO
.
G
High transition frequency f
T
.
G
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
6.9
±
0.1
0.55
±
0.1
0.45
±
0.05
1
±
0
1
2.5
±
0.1
1.0
1.5
1.5 R0.9
R0.9
R07
0
0.85
3
±
0
2
±
0
2
±
0
1
±
0
4
±
0
4
±
0
2.5
2.5
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
250
400
200
400
5
100
70
600
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
2SD662
2SD662B
2SD662
2SD662B
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to emitter
voltage
Emitter to base voltage
Forward current
transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CEO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
V
CE
= 100V, I
B
= 0
I
C
= 100
μ
A, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
200
400
5
30
30
50
typ
80
5
max
2
220
150
1.2
10
Unit
μ
A
V
V
V
MHz
pF
*
h
FE
Rank classification
Rank
P
Q
R
h
FE
30 ~ 100
60 ~ 150
100 ~ 220
2SD662
2SD662B
2SD662
2SD662B
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