參數(shù)資料
型號: 2SD560
廠商: NEC Corp.
英文描述: NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
中文描述: NPN硅外延晶體管(達林頓接線)低頻功率放大器和低速開關
文件頁數(shù): 2/6頁
文件大?。?/td> 90K
代理商: 2SD560
Data Sheet D14863EJ3V0DS
2
2SD560
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 100 V, I
E
= 0 A
1.0
μ
A
h
FE1
V
CE
= 2.0 V, I
C
= 3.0 A
Note
2,000
6,000
15,000
DC current gain
h
FE2
V
CE
= 2.0 V, I
C
= 5.0 A
Note
500
Collector saturation voltage
V
CE(sat)
I
C
= 3.0 A, I
B
= 3.0 mA
Note
0.9
1.5
V
Base saturation voltage
V
BE(sat)
I
C
= 3.0 A, I
B
= 3.0 mA
Note
1.6
2.0
V
Turn-on time
t
on
1.0
μ
s
Storage time
t
stg
3.5
μ
s
Fall time
t
f
I
C
= 3.0 A, R
L
= 16.7
,
I
B1
=
I
B2
= 3.0 mA, V
CC
50 V
Refer to the test circuit.
1.2
μ
s
Note
Pulse test PW
350
μ
s, duty cycle
2%
h
FE
CLASSIFICATION
Marking
MB
LB
KB
h
FE1
2,000 to 5,000
3,000 to 7,000
5,000 to 15,000
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
Base current
waveform
Collector current
waveform
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