參數(shù)資料
型號: 2SD560
廠商: NEC Corp.
英文描述: NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
中文描述: NPN硅外延晶體管(達林頓接線)低頻功率放大器和低速開關
文件頁數(shù): 1/6頁
文件大?。?/td> 90K
代理商: 2SD560
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confirm that this is the latest version.
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2002
Document No. D14863EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD560
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
The 2SD560 is a mold power transistor developed for low-
frequency power amplifiers and low-speed switching. This transistor is
ideal for direct driving from the IC output of devices such as pulse
motor drivers and relay drivers, and PC terminals.
FEATURES
C-to-E reverse diode inserted
Low collector saturation voltage
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
Conditions
Ratings
150
100
7.0
±
5.0
±
8.0
Unit
V
V
V
A
A
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
PW
10 ms,
duty cycle
50%
Base current (DC)
Total power dissipation
I
B(DC)
P
T
0.5
30
1.5
150
A
W
W
°
C
°
C
T
C
= 25
°
C
T
A
= 25
°
C
Junction temperature
Storage temperature
T
j
T
stg
55 to +150
ORDERING INFORMATION
Ordering Name
2SD560
Package
TO-220AB
(TO-220AB)
INTERNAL EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter
相關PDF資料
PDF描述
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