參數(shù)資料
型號(hào): 2SD476K
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Triple Diffused
中文描述: 硅npn型三重?cái)U(kuò)散
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 32K
代理商: 2SD476K
2SD476(K), 2SD476A(K)
3
Collector to emitter voltage V
CE
(V)
C
C
0
2
4
6
8
10
Typical Output Characteristics
1
2
3
4
5
T
C
= 25
°
C
I
B
= 0
10 mA
20
50
40
60
80
90
30
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2
5
Base to emitter voltage V
BE
(V)
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
C
C
Typical Transfer Characteristics
V
CE
= 4 V
T
C
°
C
°
C
°
C
5
0.01 0.02
10
20
50
200
500
1,000
100
Collector current I
C
(A)
D
F
0.05 0.1 0.2
0.5 1.0
2
5
DC Current Transfer Ratio
vs. Collector Current
V
CE
= 4 V
T
C
= 75
°
C
–25
25
5
0.01 0.02
0.2
0.4
0.6
1.0
1.2
1.4
0.8
Collector current I
C
(A)
C
C
(
0.05 0.1
0.2
0.5
1.0
2
5
Collector to Emitter Saturation Voltage
vs. Collector Current
l
C
= 10 l
B
T
C
= 75
°
C
–25
25
相關(guān)PDF資料
PDF描述
2SD476 Power Bipolar Transistors
2SD476A Power Bipolar Transistors
2SD560 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
2SD560KB TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220AB
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