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參數(shù)資料
| 型號： | 2SD476 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Power Bipolar Transistors |
| 中文描述： | 功率雙極晶體管 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 32K |
| 代理商： | 2SD476 |
2SD476(K), 2SD476A(K)
3
Collector to emitter voltage V
CE
(V)
C
C
0
2
4
6
8
10
Typical Output Characteristics
1
2
3
4
5
T
C
= 25
°
C
I
B
= 0
10 mA
20
50
40
60
80
90
30
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2
5
Base to emitter voltage V
BE
(V)
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
C
C
Typical Transfer Characteristics
V
CE
= 4 V
T
C
°
C
°
C
°
C
5
0.01 0.02
10
20
50
200
500
1,000
100
Collector current I
C
(A)
D
F
0.05 0.1 0.2
0.5 1.0
2
5
DC Current Transfer Ratio
vs. Collector Current
V
CE
= 4 V
T
C
= 75
°
C
–25
25
5
0.01 0.02
0.2
0.4
0.6
1.0
1.2
1.4
0.8
Collector current I
C
(A)
C
C
(
0.05 0.1
0.2
0.5
1.0
2
5
Collector to Emitter Saturation Voltage
vs. Collector Current
l
C
= 10 l
B
T
C
= 75
°
C
–25
25
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD476A | Power Bipolar Transistors |
| 2SD560 | NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
| 2SD560KB | TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220AB |
| 2SD560LB | TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220AB |
| 2SD560MB | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD476A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power Bipolar Transistors |
| 2SD476AK | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Triple Diffused |
| 2SD476K | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Triple Diffused |
| 2SD478 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
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