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參數資料
| 型號： | 2SD2673TL |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TSMT3, 3 PIN |
| 文件頁數： | 2/3頁 |
| 文件大?。?/td> | 67K |
| 代理商： | 2SD2673TL |
2SD2673
Transistors
Rev.D
2/2
Electrical characteristic curves
COLLECTOR CURRENT : IC (A)
DC
CURRENT
GAIN
:
h
FE
Fig.1 DC current gain
vs. collector current
0.001
0.01
0.1
1
10
1000
100
VCE
=2V
Pulsed
Ta
=125°C
Ta
=40°C
Ta
=25°C
BASE
SATURATION
VOLTAGE
:
V
BE
(sat)
(V)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(sat)
(V
)
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
COLLECTOR CURRENT : IC (A)
0.01
0.001
1
0.1
0.001
0.01
0.1
10
1
Ta
=25°C
Ta
=125°C
IC/IB
=20/1
Pulsed
Ta
=40°C
COLLECTOR CURRENT : IC (A)
0.001
0.01
0.1
1
10
1000
100
IC/IB
=20/1
Pulsed
Ta
=125°C
Ta
=40°C
Ta
=25°C
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V
)
Fig.3 Collector-emitter saturation voltage
vs. collector current
BASE TO EMITTER CURRENT : VBE (V)
COLLECTOR
CURRENT
:
I
C
(A)
Fig.4 Grounded emitter propagation
characteristics
01
10
0.001
0.01
1
10
0.1
VBE
=2V
Pulsed
Ta
=125°C
Ta
=25°C
Ta
=40°C
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(pF
EMITTER CURRENT : IE (A)
TRANSITION
FREQUENCY
:
f
T
(MHz)
Fig.6 Gain bandwidth product
vs. emitter current
0.01
0.1
1
10
1
10
100
Ta
=25°C
VCE
=2V
f
=100MHz
)
EMITTER
INPUT
CAPACITANCE
:
Cib
(pF)
Fig.5 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
0.01
0.1
1
10
1000
100
Cib
Cob
f
=1MHz
IC
=0A
Ta
=25
°C
EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : VCB(V)
COLLECTOR CURRENT : IC (A)
Fig.7 Switching time
0.01
0.1
1
10
10000
1000
100
tstg
tdon
tr
tf
IC/IB
=20/1
Pulsed
VCE
=12V
Ta
=25
°C
SWITCHING
TIME
:
(ns)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD2674TL | 功能描述:兩極晶體管 - BJT NPN 12V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD2675TL | 功能描述:兩極晶體管 - BJT NPN 30V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD2679T100 | 制造商:ROHM Semiconductor 功能描述:2A / 30V BIPOLAR TRANSISTOR 3MPT3 - Tape and Reel 制造商:ROHM Semiconductor 功能描述:TRANS NPN BIPO 30V 2A MPT3 制造商:ROHM Semiconductor 功能描述:BIPOLAR TRANSISTR 2A 30V |
| 2SD2686(TE12L,F) | 制造商:Toshiba 功能描述:NPN 制造商:Toshiba America Electronic Components 功能描述:Darlington Trans. NPN 60V 1A hfe2000min. |
| 2SD2695(F) | 制造商:Toshiba 功能描述:NPN Bulk |
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