2SD2639
No.6960-1/4
Features
Wide ASO because of on-chip ballast resistance.
Good dependence of fT on current and good HF characteristic.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
160
V
Collector-to-Emitter Voltage
VCEO
140
V
Emitter-to-Base Voltage
VEBO
6V
Collector Current
IC
12
A
Collector Current (Pulse)
ICP
15
A
Collector Dissipation
PC
Tc=25°C80
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--40 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=80V, IE=0A
0.1
mA
Emitter Cutoff Current
IEBO
VEB=4V, IC=0A
0.1
mA
DC Current Gain
hFE1VCE=5V, IC=1A
60*
200*
hFE2VCE=5V, IC=6A
20
Gain-Bandwidth Product
fT
VCE=5V, IC=1A
15
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
210
pF
Continued on next page.
* : The 2SD2639 is classified by 1A hFE as follows :
Rank
D
E
hFE
60 to 120
100 to 200
www.semiconductor-sanyo.com/network
Ordering number : EN6960A
D2408DA MS IM / 62501 TS IM TA-3139, 3140
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SANYO Semiconductors
DATA SHEET
2SD2639
NPN Triple Diffused Planar Silicon Transistor
140V / 12A, AF 60W Output Applications