參數(shù)資料
型號(hào): 2SD2465
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon NPN epitaxial planar type(For low-voltage switching)
中文描述: 4 A, 20 V, NPN, Si, POWER TRANSISTOR, TO-220E
封裝: TO-220E, FULL PACK-3
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 54K
代理商: 2SD2465
1
Power Transistors
2SD2465, 2SD2465A
Silicon NPN epitaxial planar type
For low-voltage switching
Complementary to 2SB1603
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
G
High-speed switching
G
Full-pack package superior in insulation, which can be installed
to the heat sink with one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
40
50
20
40
5
8
4
25
2
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SD2465
2SD2465A
2SD2465
2SD2465A
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 40V, I
E
= 0
V
CB
= 50V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 1A
I
C
= 2A, I
B
= 0.1A
I
C
= 2A, I
B
= 0.1A
V
CE
= 5V, I
C
= 0.5A, f = 10MHz
I
C
= 2A, I
B1
= 0.2A, I
B2
= – 0.2A,
V
CC
= 20V
min
20
40
45
90
typ
120
0.2
0.5
0.1
max
50
50
50
260
0.5
1.5
Unit
μ
A
μ
A
V
V
V
MHz
μ
s
μ
s
μ
s
2SD2465
2SD2465A
2SD2465
2SD2465A
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
90 to 180
130 to 260
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
9.9
±
0.3
2
3
1
4.6
±
0.2
2.9
±
0.2
2.6
±
0.1
2.54
±
0.2
5.08
±
0.4
0.75
±
0.1
1.2
±
0.15
1.45
±
0.15
1
±
0
1
+
φ
3.2
±
0.1
3
±
0
8
±
0
4
±
0
S
0.7
±
0.1
7
°
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