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參數(shù)資料
| 型號： | 2SD2163 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING |
| 中文描述： | NPN硅外延晶體管（達林頓接線低頻功率放大器和低速高電流開關(guān)） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 97K |
| 代理商： | 2SD2163 |
Data Sheet D16139EJ1V0DS
2
2SD2163
TYPICAL CHARACTERISTICS (Ta = 25
°
C)
T
T
Case Temperature T
C
(
°
C)
Case Temperature T
C
(
°
C)
Collector to Emitter Voltage V
CE
(V)
C
C
C
C
Pulse Width PW (s)
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
T
t
(
°
C
D
F
I
C
(with infinite heatsink)
Ta = 25
°
C
(without heatsink)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2163J | TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 10A I(C) | TO-220 |
| 2SD2163K | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SD2163L | TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 10A I(C) | TO-220 |
| 2SD2163M | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SD2164 | NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2163-AZ-J | 制造商:Renesas Electronics Corporation 功能描述:Trans Darlington NPN 100V 10A 3-Pin(3+Tab) TO-220 Isolated |
| 2SD2163J | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 10A I(C) | TO-220 |
| 2SD2163K | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 10A I(C) | TO-220 |
| 2SD2163L | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 10A I(C) | TO-220 |
| 2SD2163M | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 10A I(C) | TO-220 |
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