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參數(shù)資料
| 型號(hào)： | 2SD2164 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
| 中文描述： | NPN硅外延晶體管低頻功率放大器和低速開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 128K |
| 代理商： | 2SD2164 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
Document No. D15606EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD2164
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
The 2SD2164 is a single power transistor developed especially
for high h
FE
. This transistor is ideal for simplifying drive circuits and
reducing power dissipation because its h
FE
is as high as that of
Darlington transistors, but it is a single transistor.
In addition, this transistor features a small resin insulated
package, thus contributing to high-density mounting and mounting
cost reduction.
FEATURES
High h
FE
and low V
CE(sat)
:
h
FE
1,300 TYP. (V
CE
= 5.0 V, I
C
= 0.5 A)
V
CE(SAT)
0.3 V TYP. (I
C
= 2.0 A, I
B
= 20 mA)
Full mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
60
V
Collector to emitter voltage
V
CEO
60
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
3.0
A
Collector current (pulse)
I
C(pulse)
5.0
Note
A
Base current (DC)
I
B(DC)
0.5
A
Total power dissipation
P
T
(T
C
= 25
°
C)
20
W
Total power dissipation
P
T
(T
A
= 25
°
C)
2.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
Note
PW
≤
300
μ
s, duty cycle
≤
10%
PACKAGE DRAWING (UNIT: mm)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2164K | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR |
| 2SD2164L | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SD2164M | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR |
| 2SD2165 | NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
| 2SD2198Q | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2164-AZ-L | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD2164K | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR |
| 2SD2164L | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR |
| 2SD2164M | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR |
| 2SD2165 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
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