參數(shù)資料
型號: 2SD2121L
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial
中文描述: npn型硅外延
文件頁數(shù): 2/5頁
文件大?。?/td> 31K
代理商: 2SD2121L
2SD2121(L)/(S)
2
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
35
V
I
C
= 1 mA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
35
V
I
C
= 10 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
5
V
I
E
= 1 mA, I
C
= 0
Collector cutoff current
I
CBO
h
FE1
*
1
h
FE2
V
BE
V
CE(sat)
20
μ
A
V
CB
= 35 V, I
E
= 0
V
CE
= 2 V, I
C
= 0.5 A*
2
V
CE
= 2 V, I
C
= 1.5 A*
2
V
CE
= 2 V, I
C
= 1.5 A*
2
I
C
= 2 A, I
B
= 0.2 A*
2
DC current transfer ratio
60
320
20
Base to emitter voltage
1.5
V
Collector to emitter saturation
voltage
Notes: 1. The 2SD2121(L)/(S) is grouped by h
FE1
as follows.
1.0
V
B
C
D
60 to 120
100 to 200
160 to 320
2. Pulse test.
Maximum Collector Dissipation Curve
30
20
10
0
50
100
150
Case temperature T
C
(
°
C)
C
C
10
1.0
3.0
C
C
0.3
0.1
1
10
3
30
100
Collector to emitter voltage V
CE
(V)
Ta = 25
°
C
1 shot pulse
i
C(peak)
I
C(max)
1s
Area of Safe Operation
D prtn
(
C
5
°
C
PW = 10 ms
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD2121S 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial
2SD2122 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial
2SD2122(L) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1.5A I(C) | TO-251AA
2SD2122(L)-(1)B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT
2SD2122(L)-(1)C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT