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參數(shù)資料
| 型號： | 2SD2106 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial(外延NPN晶體管) |
| 中文描述： | npn型硅外延（外延npn型晶體管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 34K |
| 代理商： | 2SD2106 |
2SD2106
2
Absolute Maximum Ratings (
Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
P
C
*
Tj
120
V
Collector to emitter voltage
120
V
Emitter to base voltage
7
V
Collector current
6
A
Collector peak current
10
A
Collector power dissipation
2
W
1
25
Junction temperature
150
°C
Storage temperature
Note:
1. Value at T
C
= 25°C.
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
120
—
—
V
I
C
= 0.1 mA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
120
—
—
V
I
C
= 25 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
7
—
—
V
I
E
= 50 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
—
—
10
μA
V
CB
= 100 V, I
E
= 0
V
CE
= 100 V, R
BE
=
∞
V
CE
= 3 V, I
C
= 3 A*
I
C
= 3 A, I
B
= 6 mA*
I
C
= 6 A, I
B
= 60 mA*
I
C
= 3 A, I
B
= 6 mA*
I
C
= 6 A, I
B
= 60 mA*
—
—
10
DC current transfer ratio
1000
—
20000
1
Collector to emitter saturation
—
—
1.5
V
1
voltage
—
—
3.0
1
Base to emitter saturation
—
—
2.0
V
1
voltage
Note:
—
—
3.5
1
1. Pulse test.
See switching characteristic curve of 2SD768(K).
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