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參數(shù)資料
| 型號(hào)： | 2SD2018 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN epitaxial planar type darlington |
| 中文描述： | 1 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | ROHS COMPLIANT, TO-126B-A1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 78K |
| 代理商： | 2SD2018 |
Power Transistors
2SD2018
Silicon NPN epitaxial planar type darlington
1
Publication date: May 2003
SJD00239BED
For low-frequency amplification
■
Features
High forward current transfer ratio h
FE
Built-in 60 V Zener diode between base to collector
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 100
μ
A, I
E
= 0
50
85
V
Collector-emitter voltage (Base open)
V
CEO
I
CBO
I
C
= 1 mA, I
B
= 0
V
CB
=
25 V, I
E
=
0
V
EB
=
4 V, I
C
=
0
V
CE
=
10 V, I
C
=
1.0 A
I
C
=
1.0 A, I
B
=
1.0 mA
I
C
=
1.0 A, I
B
=
1.0 mA
50
85
V
Collector-base cutoff current (Emitter open)
1
μ
A
Emitter-base cutoff current (Collector open)
I
EBO
2
mA
Forward current transfer ratio
*
h
FE
6
500
40
000
Collector-emitter saturation voltage
*
V
CE(sat)
1.8
V
Base-emitter saturation voltage
*
V
BE(sat)
2.2
V
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
60
V
Collector-emitter voltage (Base open)
60
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
I
CP
1
A
Peak collector current
1.5
A
Collector power
T
C
=
25
°
C
P
C
1.2
W
dissipation
5.0
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Pulse measurement
8.0
+0.5
1
±
0
3
±
0
3
±
0
1
±
0
1
±
1
3.2
±
0.2
0.75
±
0.1
0.5
±
0.1
2.3
±
0.2
4.6
±
0.2
0.5
±
0.1
1.76
±
0.1
1
2
3
φ
3.16
±
0.1
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Internal Connection
Note)*: With a 100 mm
×
100 mm
×
2 mm Al heat sick.
B
E
R
1
R
2
C
+
25
10
+
25
10
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