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參數資料
| 型號： | 2SD1985A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type(For power amplification) |
| 中文描述： | 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數： | 2/2頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2SD1985A |
2
Power Transistors
2SD1985, 2SD1985A
P
C
— Ta
I
C
— V
CE
I
C
— V
BE
V
CE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
Area of safe operation (ASO)
R
th(t)
— t
0
160
40
120
80
140
20
100
60
0
40
30
10
20
(1) T
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(1)
(3)
(2)
Ambient temperature Ta (C)
C
C
0
12
10
8
2
6
4
0
5
4
3
2
1
T
C
=25C
I
B
=100mA
90mA
50mA
40mA
30mA
20mA
10mA
Collector to emitter voltage V
CE
(V)
C
C
0
Base to emitter voltage V
BE
(V)
2.4
2.0
1.6
0.4
1.2
0.8
0
8
6
2
5
7
4
1
3
T
C
=100C
25C
–25C
V
CE
=4V
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=8
T
C
=100C
25C
–25C
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE
=4V
T
C
=100C
25C
–25C
F
F
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
=5V
f=10MHz
T
C
=25C
T
T
–1
–10
–100
–1000
–3
–30
–300
– 0.001
– 0.003
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
10ms
t=1ms
DC
2
2
I
CP
I
C
Non repetitive pulse
T
C
=25C
Collector to emitter voltage V
CE
(V)
C
C
10
–4
10
10
–3
10
–1
10
–2
1
10
3
10
2
10
4
0.1
1
10
100
10000
1000
Note: R
was measured at Ta=25C and under natural convection.
(1) P
T
=10V
×
0.2A (2W) and without heat sink
(2) P
T
=10V
×
1.0A (10W) and with a 100
×
100
×
2mm Al heat sink
(1)
(2)
Time t (s)
T
t
(
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PDF描述 |
|---|---|
| 2SD1991A | Silicon NPN epitaxial planer type |
| 2SD1992A | Silicon NPN epitaxial planer type |
| 2SD1993 | Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) |
| 2SD1994A | Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification) |
| 2SD1995 | Silicon NPN epitaxial planer type(For low-frequency amplification) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD1987 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220FP 60V 4A 30W BCE |
| 2SD1988 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB 45V 2A 25W BCE |
| 2SD199 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 800V .5A 25W BEC |
| 2SD1991A | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1991A0A | 功能描述:TRANS NPN GP AMP 50VCEO MT-1 RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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