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參數(shù)資料
| 型號： | 2SD1985A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type(For power amplification) |
| 中文描述： | 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2SD1985A |
1
Power Transistors
2SD1985, 2SD1985A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1393 and 2SB1393A
I
Features
G
High forward current transfer ratio h
FE
which has satisfactory linearity
G
Low collector to emitter saturation voltage V
CE(sat)
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
80
60
80
6
5
3
25
2
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SD1985
2SD1985A
2SD1985
2SD1985A
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CE
= 60V, I
B
= 0
V
CE
= 80V, I
B
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 60V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 3A
V
CE
= 4V, I
C
= 3A
I
C
= 3A, I
B
= 0.375A
V
CE
= 5V, I
C
= 0.5A, f = 10MHz
I
C
= 1A, I
B1
= 0.1A, I
B2
= – 0.1A,
V
CC
= 50V
min
60
80
70
10
typ
30
0.5
2.5
0.4
max
200
200
300
300
1
250
1.8
1.2
Unit
μ
A
μ
A
mA
V
V
V
MHz
μ
s
μ
s
μ
s
2SD1985
2SD1985A
2SD1985
2SD1985A
2SD1985
2SD1985A
*
h
FE1
Rank classification
Rank
Q
P
h
FE1
70 to 150
120 to 250
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±
0.2
5.5
±
0.2
7
±
0
1
±
0
0
±
0
1
±
0
S
4
0.5
+0.2
–0.1
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.25
5.08
±
0.5
2
1
3
2.7
±
0.2
4.2
±
0.2
4
±
0
φ
3.1
±
0.1
Note: Ordering can be made by the common rank (PQ rank h
FE
= 70 to 250) in the rank classification.
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| 2SD1991A | Silicon NPN epitaxial planer type |
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| 2SD1993 | Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) |
| 2SD1994A | Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification) |
| 2SD1995 | Silicon NPN epitaxial planer type(For low-frequency amplification) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1987 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220FP 60V 4A 30W BCE |
| 2SD1988 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB 45V 2A 25W BCE |
| 2SD199 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 800V .5A 25W BEC |
| 2SD1991A | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1991A0A | 功能描述:TRANS NPN GP AMP 50VCEO MT-1 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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