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參數(shù)資料
| 型號： | 2SD1752AP |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 40 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | I-G1, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 248K |
| 代理商： | 2SD1752AP |
Power Transistors
1
Publication date: September 2003
SJD00224BED
2SD1752, 2SD1752A
Silicon NPN epitaxial planar type
For power amplification and low-voltage switching
Complementary to 2SB1148 and 2SB1148A
■ Features
Low collector-emitter saturation voltage V
CE(sat)
High-speed switching
Satisfactory liniarity of forward current transfer ratio h
FE
Large collector current I
C
I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD1752
VCBO
40
V
(Emitter open)
2SD1752A
50
Collector-emitter voltage 2SD1752
VCEO
20
V
(Base open)
2SD1752A
40
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
10
A
Peak collector current
ICP
20
A
Collector power dissipation
PC
15
W
Ta = 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
7.0±0.3
3.5±0.2
0 to 0.15
12.6
±
0.3
7.2
±
0.3
2.5
±
0.2
2.5
±
0.2
(1.0)
1.0
±
0.2
3.0±0.2
2.0±0.2
1.1±0.1
0.75±0.1
0.9±0.1
0 to 0.15
0.4±0.1
2.3±0.2
4.6±0.4
123
Unit : mm
Rank
Q
P
hFE2
90 to 180
130 to 260
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Note) Self-supported type package is also prepared.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SD1752
VCEO
IC = 10 mA, IB = 020
V
(Base open)
2SD1752A
40
Collector-base cutoff
2SD1752
ICBO
VCB = 40 V, IE = 050
A
current (Emitter open)
2SD1752A
VCB = 50 V, IE = 050
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 5 V, I
C
= 050
A
Forward current transfer ratio
hFE1
VCE = 2 V, IC = 0.1 A
45
hFE2 *
VCE = 2 V, IC = 3 A
90
260
Collector-emitter saturation voltage
VCE(sat)
IC
= 10 A, I
B
= 0.33 A
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC = 10 A, IB = 0.33 A
1.5
V
Forward current transfer ratio
fT
VCE = 10 V, IC = 0.5 A, f = 10 MHz
120
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
200
pF
(Common base, input open circuited)
Turn-on time
ton
IC = 3 A, IB1 = 0.1 A, IB2 = 0.1 A
0.3
s
Storage time
tstg
VCC = 20 V
0.4
s
Fall time
tf
0.1
s
1: Base
2: Collector
3: Emitter
I-G1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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