參數(shù)資料
型號(hào): 2SD1750A
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon NPN triple diffusion planar type Darlington
中文描述: 8 A, 80 V, NPN, Si, POWER TRANSISTOR
封裝: ROHS COMPLIANT, I-G1, 3 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 64K
代理商: 2SD1750A
1
Power Transistors
2SD1750, 2SD1750A
Silicon NPN triple diffusion planar type Darlington
For midium speed power switching
Complementary to 2SB1180 and 2SB1180A
I
Features
G
High foward current transfer ratio h
FE
G
High-speed switching
G
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
80
60
80
7
12
8
15
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SD1750
2SD1750A
2SD1750
2SD1750A
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 3V, I
C
= 4A
V
CE
= 3V, I
C
= 8A
I
C
= 4V, I
B
= 8mA
I
C
= 4V, I
B
= 8mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 4A, I
B1
= 8mA, I
B2
= –8mA
min
60
80
2000
500
typ
20
0.5
4
1
max
100
100
2
10000
1.5
2
Unit
μ
A
mA
V
V
V
MHz
μ
s
μ
s
μ
s
2SD1750
2SD1750A
2SD1750
2SD1750A
*
h
FE1
Rank classification
Rank
Q
P
h
FE1
2000 to 5000
4000 to 10000
Internal Connection
B
E
C
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package (Y)
7
±
0
7.0
±
0.3
3.0
±
0.2
3.5
±
0.2
1
+
0
±
0
1
±
0
4.6
±
0.4
2
1
3
1.1
±
0.1
0.75
±
0.1
2.3
±
0.2
0.85
±
0.1
0.4
±
0.1
7.0
±
0.3
0.75
±
0.1
2.3
±
0.2
4.6
±
0.4
1.1
±
0.1
1
±
0
7
±
0
2.0
±
0.2
0.9
±
0.1
0 to 0.15
3.5
±
0.2
2
±
0
1
1
2
±
0
3.0
±
0.2
1
1
2
3
0 to 0.15
2.5
0.5 max.
相關(guān)PDF資料
PDF描述
2SD1751 Silicon NPN triple diffusion planar type(For power amplification)
2SD1752 Silicon NPN epitaxial planar type
2SD1752A Silicon NPN epitaxial planar type
2SD1771 Silicon NPN triple diffusion planar type
2SD1771A Silicon NPN triple diffusion planar type
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD1755 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SD1757 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SD1757K 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SD1757KT146 制造商:ROHM Semiconductor 功能描述:
2SD1757KT146Q 功能描述:兩極晶體管 - BJT NPN 15V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2