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參數(shù)資料
| 型號(hào)： | 2SD1752 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN epitaxial planar type |
| 中文描述： | 10 A, 20 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | I-G1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 57K |
| 代理商： | 2SD1752 |
1
Power Transistors
2SD1752, 2SD1752A
Silicon NPN epitaxial planar type
For power amplification and low-voltage switching
Complementary to 2SB1148 and 2SB1148A
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
G
High-speed switching
G
Satisfactory linearity of foward current transfer ratio h
FE
G
Large collector current I
C
G
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
40
50
20
40
5
20
10
15
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SD1752
2SD1752A
2SD1752
2SD1752A
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
Conditions
V
CB
= 40V, I
E
= 0
V
CB
= 50V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 3A
I
C
= 10A, I
B
= 0.33A
I
C
= 10A, I
B
= 0.33A
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
I
C
= 3A, I
B1
= 0.1A, I
B2
= – 0.1A,
V
CC
= 20V
min
20
40
45
90
typ
120
200
0.3
0.4
0.1
max
50
50
50
260
0.6
1.5
Unit
μ
A
μ
A
V
V
V
MHz
pF
μ
s
μ
s
μ
s
2SD1752
2SD1752A
2SD1752
2SD1752A
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
90 to 180
130 to 260
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package (Y)
7
±
0
7.0
±
0.3
3.0
±
0.2
3.5
±
0.2
1
+
–
0
±
0
1
±
0
4.6
±
0.4
2
1
3
1.1
±
0.1
0.75
±
0.1
2.3
±
0.2
0.85
±
0.1
0.4
±
0.1
7.0
±
0.3
0.75
±
0.1
2.3
±
0.2
4.6
±
0.4
1.1
±
0.1
1
±
0
7
±
0
2.0
±
0.2
0.9
±
0.1
0 to 0.15
3.5
±
0.2
2
±
0
1
1
2
±
0
3.0
±
0.2
1
1
2
3
0 to 0.15
2.5
0.5 max.
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PDF描述 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1755 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1757 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1757K | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1757KT146 | 制造商:ROHM Semiconductor 功能描述: |
| 2SD1757KT146Q | 功能描述:兩極晶體管 - BJT NPN 15V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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