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參數(shù)資料
| 型號： | 2SD1666 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | LOW FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS |
| 中文描述： | 低頻通用放大器應(yīng)用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 30K |
| 代理商： | 2SD1666 |
2SB1133 / 2SD1666
No.3031-1/4
Features
Wide ASO(Adoption of MBIT process).
Micaless package facilitating easy mounting.
High reliability.
Specifications
( ) : 2SB1133
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
Conditions
Ratings
Unit
V
V
V
A
A
W
W
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
(
)60
(
)60
(
)6
(
)3
(
)8
Collector Dissipation
PC
2
Tc=25
°
C
25
150
Junction Temperature
Storage Temperature
Tj
Tstg
40 to +150
Electrical Characteristics
at Ta=25
°
C
Parameter
Symbol
Conditions
Ratings
typ
Unit
min
max
(--)100
(--)100
*280
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
hFE(1)
hFE(2)
VCB=(--)40V, IE=0
VEB=(--)4V, IC=0
VCE=(--)5V, IC=(--)0.5A
VCE=(--)5V, IC=(--)3A
μ
A
μ
A
DC Current Gain
*70
20
Continued on next page
.
* : The 2SB1133 / 2SD1666 are classified by 0.5A hFE as follows :
Rank
Q
R
hFE
70 to 140 100 to 200 140 to 280
S
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN3031A
2SB1133 / 2SD1666
Low-Frequency
General-Purpose Amplifier Applications
Package Dimensions
unit : mm
2041A
[2SB1133 / 2SD1666]
72501 GI IM
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
1.6
1.2
0.75
1
1
10.0
1
5
3.2
7
3
2.55
2.55
2.4
4.5
2.8
0.7
2.55
2.55
2
1
2
3
PNP / NPN Triple Diffused Planar Silicon Transistors
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1672 | NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR |
| 2SD1685 | High-Current Switching Applications |
| 2SD1705 | Silicon NPN epitaxial planar type |
| 2SD1706 | SILICON NPN EPITAXIAL PLANAR TYPE POWER SWITCHING |
| 2SB1155 | SILICON NPN EPITAXIAL PLANAR TYPE POWER SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1667 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANS. TO220ML60V 5A 20W BCE |
| 2SD1667R | 制造商:SANYO 功能描述:NPN 50V 5A 100 to 200 TO-220ML Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 50V 5A TO-220ML |
| 2SD1668 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANS. TO220ML60V 7A 25W BCE |
| 2SD1672K | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1676 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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