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參數(shù)資料
| 型號： | 2SD1559-E |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 145K |
| 代理商： | 2SD1559-E |
2SD1559
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
100
V
Emitter to base voltage
V
EBO
7V
Collector current
I
C
20
A
Collector peak current
I
C(peak)
30
A
Base current
I
B
3A
Collector power dissipation
P
C*
1
100
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
100
—
V
I
C = 0.1 mA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
100
—
V
I
C = 25 mA, RBE = ∞
Collector to emitter sustain
voltage
V
CEO(sus)
100
—
V
I
C = 200 mA, RBE = ∞*
1
Emitter to base breakdown
voltage
V
(BR)EBO
7—
—
VV
EB = 50 mA, IC = 0
Collector cutoff current
I
CBO
—
100
AV
CB = 100 V, IE = 0
I
CEO
—
1.0
mA
V
CE = 80 V, RBE = ∞
DC current transfer ratio
h
FE
1000
—
20000
V
CE = 3 V, IC = 10 A*
1
Collector to emitter saturation
voltage
V
CE(sat)1
—
2.0
V
I
C = 10 A, IB = 20 mA*
1
Base to emitter saturatiopn
voltage
V
BE(sat)1
—
2.5
V
Collector to emitter saturation
voltage
V
CE(sat)2
—
3.0
V
I
C = 20 A, IB = 200 mA*
1
Base to emitter saturation
voltage
V
BE(sat)2
—
3.5
V
Turn on time
t
on
—
1.0
—
sI
C = 10 A, IB1 = –IB2 = 20 mA
Storage time
t
stg
—
9.0
—
s
Fall time
t
f
—
3.0
—
s
Note:
1. Pulse test.
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|---|---|
| 2SD1562A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB |
| 2SD1566 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR MP-40150V 10A 60W BCEC |
| 2SD1567 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB 60V 3A 30W BCE |
| 2SD1569 | 制造商:Distributed By MCM 功能描述:SUB ONLY NEC TRANSISTOR TO-220 60V 3A 30W BCE |
| 2SD1571 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTOR2-10L1A 800V 3A 2W BCE |
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