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參數(shù)資料
| 型號(hào)： | 2SD1582L-AZ |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 104K |
| 代理商： | 2SD1582L-AZ |
1998
Document No. D16198EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SD1582
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SD1582 is a single type super high hFE transistor and low
collector saturation voltage and high voltage. This transistor is
available for broad applications as variety of drives.
FEATURES
Ultra high hFE
hFE = 800 to 3200 (@ VCE = 5.0 V, IC = 300 mA)
High voltage and wide ASO
VCBO = 60 V, VCEO = 50 V
Low collector saturation voltage
VCE(sat) = 0.15 V TYP. (@ IC = 500 A, IB = 5.0 mA)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
15
V
Collector current (DC)
IC(DC)
1.0
A
Collector current (pulse)
IC(pulse)*1.5
A
Total power dissipation
PT
1.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
50 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 60 V, IE = 0
100
nA
Emitter cutoff current
IEBO
VEB = 10 V, IC = 0
100
nA
DC current gain
hFE1
VCE = 5.0 V, IC = 300 mA
*
800
1500
3200
DC current gain
hFE2
VCE = 5.0 V, IC = 1.0 mA
*
400
DC base voltage
VBE
VCE = 5.0 V, IC = 100 mA
*
600
620
700
mV
Collector saturation voltage
VCE(sat)
IC = 500 mA, IB = 5.0 mA
*
0.15
0.30
V
Base saturation voltage
VBE(sat)
IC = 500 mA, IB = 5.0 mA
*
0.77
1.2
V
Output capacitance
Cob
VCB = 10 V, IE = 0, f = 1.0 MHz
18
30
pF
Gain bandwidth product
fT
VCE = 10 V, IE =
500 mA
150
250
MHz
** Pulse test PW
≤ 350
s, duty cycle ≤ 2% per pulsed
hFE1/hFE CLASSIFICATION M : 800 to 1600 L : 1200 to 2400 K : 2000 to 3200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1582 | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1582L | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1582M | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1583-Z-T1K | 2000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1583-Z-T2K | 2000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1583 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1583-AZ(L) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SD1583-AZ-K | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SD1583-K-Z (AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1584-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,600V,3A,TO-252 制造商:Renesas 功能描述:Trans GP BJT NPN 60V 3A 2-Pin(2+Tab) TO-252 |
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