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參數(shù)資料
| 型號： | 2SD1511GS |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINIP3-F2, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 208K |
| 代理商： | 2SD1511GS |
Transistors
1
Publication date: September 2007
SJD00341AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1511G
Silicon NPN epitaxial planar type darlington
For low-frequency output amplification
■ Features
Forward current transfer ratio h
FE is designed high, which is appro-
priate to the driver circuit of motors and printer hammer: hFE = 4000
to 20 000.
A shunt resistor is omitted from the driver.
Mini power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■ Absolute Maximum Ratings T
a = 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
100
V
Collector-emitter voltage (Base open)
VCEO
80
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1A
Peak collector current
ICP
1.5
A
Collector power dissipation *
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 100 A, IE = 0
100
V
Collector-emitter voltage (Base open)
VCEO
IC
= 1 mA, I
B
= 080
V
Emitter-base voltage (Collector open)
VEBO
IE = 100 A, IC = 05
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 25 V, IE = 0
100
nA
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 4 V, I
C
= 0
100
nA
Forward current transfer ratio *
1, 2
hFE
VCE = 10 V, IC = 1 A
4 000
40 000
Collector-emitter saturation voltage *
1
VCE(sat)
IC = 1 A, IB = 1 mA
1.8
V
Base-emitter saturation voltage *
1
VBE(sat)
IC
= 1 A, I
B
= 1 mA
2.2
V
Transition frequency
fT
VCB = 10 V, IE = 50 mA, f = 200 MHz
150
MHz
B
C
E
≈ 200
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
■ Package
Code
MiniP3-F2
Pin Name
1: Base
2: Collector
3: Emitter
■ Marking Symbol: P
■ Internal Connection
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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| 2SD1525(F) | 功能描述:兩極晶體管 - BJT NPN VCEO 100V VCE 5V Ic 30A hFE 1000 min RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| 2SD1527(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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