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參數(shù)資料
| 型號(hào)： | 2SD1272 |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type(For high-speed switching and high current amplification ratio) |
| 中文描述： | 2.5 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | 2SD1272 |
1
Power Transistors
2SD1272
Silicon NPN triple diffusion planar type
For high-speed switching and high current amplification ratio
I
Features
G
High foward current transfer ratio h
FE
G
Satisfactory linearity of foward current transfer ratio h
FE
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
200
150
6
2.5
1
0.1
40
2
150
–55 to +150
Unit
V
V
V
A
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
EBO
V
CEO
h
FE*
V
CE(sat)
f
T
Conditions
V
CB
= 200V, I
E
= 0
V
EB
= 6V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 0.2A
I
C
= 0.5A, I
B
= 0.02A
V
CE
= 4V, I
C
= 0.1A, f = 10MHz
min
150
500
typ
25
max
100
100
2000
1
Unit
μ
A
μ
A
V
V
MHz
*
h
FE
Rank classification
Rank
Q
P
h
FE
500 to 1200 800 to 2000
T
C
=25
°
C
Ta=25
°
C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±
0.2
5.5
±
0.2
7
±
0
1
±
0
0
±
0
1
±
0
S
4
0.5
+0.2
–0.1
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.25
5.08
±
0.5
2
1
3
2.7
±
0.2
4.2
±
0.2
4
±
0
φ
3.1
±
0.1
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