參數(shù)資料
型號: 2SD1259A
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: CAPACITOR, CERAMIC, 10PF/50V 5%, 0603, SMD
中文描述: 3 A, 80 V, NPN, Si, POWER TRANSISTOR
封裝: ROHS COMPLIANT, N-G1, 3 PIN
文件頁數(shù): 2/2頁
文件大小: 48K
代理商: 2SD1259A
2
Power Transistors
2SD1259, 2SD1259A
P
C
— Ta
I
C
— V
CE
I
C
— V
BE
V
CE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
Area of safe operation (ASO)
R
th(t)
— t
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
=Ta
(2) With a 50
×
50
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=1.3W)
(1)
(2)
(3)
Ambient temperature Ta (C)
C
C
0
12
10
8
2
6
4
0
1.0
0.8
0.6
0.4
0.2
T
C
=25C
I
B
=1.2mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
1.0mA
Collector to emitter voltage V
CE
(V)
C
C
0
Base to emitter voltage V
BE
(V)
1.2
1.0
0.8
0.2
0.6
0.4
0
5
4
3
2
1
T
C
=100C
25C
–25C
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=40
T
C
=100C
25C
–25C
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE
=4V
T
C
=100C
25C
–25C
F
F
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
=12V
f=10MHz
T
C
=25C
T
T
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
I
CP
I
C
10ms
300ms
t=1ms
2
2
Collector to emitter voltage V
CE
(V)
C
C
10
–4
10
10
–3
10
–1
10
–2
1
10
3
10
2
10
4
10
–2
10
–1
1
10
10
3
10
2
(1) Without heat sink
(2) With a 50
×
50
×
2mm Al heat sink
(1)
(2)
Time t (s)
T
t
(
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