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參數(shù)資料
| 型號： | 2SD1260 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type Darlington(For power amplification) |
| 中文描述： | 2 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 64K |
| 代理商： | 2SD1260 |
1
Power Transistors
2SD1260, 2SD1260A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB937 and 2SB937A
I
Features
G
High foward current transfer ratio h
FE
G
High-speed switching
G
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
80
60
80
5
4
2
35
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SD1260
2SD1260A
2SD1260
2SD1260A
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CE
= 60V, I
E
= 0
V
CE
= 80V, I
B
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 2A
V
CE
= 4V, I
C
= 2A
I
C
= 2A, I
B
= 8mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 2A, I
B1
= 8mA, I
B2
= –8mA,
V
CC
= 50V
min
60
80
1000
1000
typ
20
0.5
4
1
max
1
1
2
2
2
10000
2.8
2.5
Unit
mA
mA
mA
V
V
V
MHz
μ
s
μ
s
μ
s
2SD1260
2SD1260A
2SD1260
2SD1260A
2SD1260
2SD1260A
*
h
FE2
Rank classification
Rank
R
Q
P
h
FE2
1000 to 2500 2000 to 5000
4000 to 10000
Internal Connection
B
E
C
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
±
0.2
6.0
±
0.5
1
±
0
1
2
1
±
0
1.5max.
0.8
±
0.1
5.08
±
0.5
2.54
±
0.3
1.1max.
0.5max.
1.0
±
0.1
3.4
±
0.3
2
1
3
Unit: mm
8.5
±
0.2
4
±
0
2
1
±
0
1
±
0
4
±
0
6.0
±
0.3
3.4
±
0.3
2.54
±
0.3
5.08
±
0.5
1.0
±
0.1
0.8
±
0.1
1
+
–
3
+
–
0 to 0.4
1.1 max.
R0.5
R0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
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| 2SD1261 | Silicon NPN triple diffusion planar type Darlington(For power amplification) |
| 2SD1262 | Silicon NPN triple diffusion planar type Darlington |
| 2SD1263A | Silicon NPN triple diffusion planar type(For power amplification) |
| 2SD1263 | Silicon NPN triple diffusion planar type(For power amplification) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1260/2SD1260A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SD1260. 2SD1260A - NPN Transistor Darlington |
| 2SD1260A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planar type Darlington(For power amplification) |
| 2SD1260AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 2A I(C) | TO-221VAR |
| 2SD1260AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 2A I(C) | TO-221VAR |
| 2SD1260AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 2A I(C) | TO-221VAR |
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