參數(shù)資料
型號(hào): 2SD1257AR
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: 7 A, 100 V, NPN, Si, POWER TRANSISTOR
封裝: N-TYPE PACKAGE-3
文件頁數(shù): 2/4頁
文件大?。?/td> 60K
代理商: 2SD1257AR
2
Power Transistors
2SD1257, 2SD1257A
PC —Ta
IC —VCE
VCE(sat) —IC
VBE(sat) —IC
hFE —IC
fT —IC
Cob —VCB
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
C=Ta
(2) With a 50
× 50 × 2mm
Al heat sink
(3) Without heat sink
(P
C=1.3W)
(1)
(2)
(3)
Ambient temperature Ta (C)
Collector
power
dissipation
P
C
(W
)
012
10
8
26
4
0
10
8
6
4
2
T
C=25C
I
B=55mA
50mA
40mA
45mA
20mA
30mA
35mA
10mA
15mA
5mA
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=20
T
C=100C
25C
–25C
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
0.01
3
1
0.1
0.03
0.3
0.01
0.03
0.1
0.3
1
3
10
(1) I
C/IB=10
(2) I
C/IB=20
T
C=25C
(1)
(2)
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
0.1
30
10
1
0.3
3
0.01
0.03
0.1
0.3
1
3
10
(1) I
C/IB=10
(2) I
C/IB=20
T
C=25C
(1)
(2)
Collector current I
C
(A)
Base
to
emitter
saturation
voltage
V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=20
T
C=–25C
25C
100C
Collector current I
C
(A)
Base
to
emitter
saturation
voltage
V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE=10V
f=10MHz
T
C=25C
Collector current I
C
(A)
Transition
frequency
f
T
(MHz
)
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
I
E=0
f=1MHz
T
C=25C
Collector to base voltage V
CB
(V)
Collector
output
capacitance
C
ob
(pF
)
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE=2V
T
C=100C
25C
–25C
Collector current I
C
(A)
Forward
current
transfer
ratio
h
FE
相關(guān)PDF資料
PDF描述
2SD1258PQ 1 A, 150 V, NPN, Si, POWER TRANSISTOR
2SD1259P 3 A, 60 V, NPN, Si, POWER TRANSISTOR
2SD1259O 3 A, 60 V, NPN, Si, POWER TRANSISTOR
2SD1261Q 4 A, 60 V, NPN, Si, POWER TRANSISTOR
2SD1261P 4 A, 60 V, NPN, Si, POWER TRANSISTOR
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