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參數(shù)資料
| 型號(hào)： | 2SD1257AR |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | N-TYPE PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 2SD1257AR |
1
Power Transistors
2SD1257, 2SD1257A
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB0934 (2SB934)
s Features
q
Low collector to emitter saturation voltage VCE(sat)
q
Satisfactory linearity of foward current transfer ratio hFE
q
Large collector current IC
q
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
130
150
80
100
7
15
7
40
1.3
150
–55 to +150
Unit
V
A
W
C
2SD1257
2SD1257A
2SD1257
2SD1257A
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE1
hFE2
*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = 100V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 3A
IC = 5A, IB = 0.25A
VCE = 10V, IC = 0.5A, f = 10MHz
IC = 3A, IB1 = 0.3A, IB2 = – 0.3A,
VCC = 50V
min
80
100
45
60
typ
30
0.5
1.5
0.1
max
10
50
260
0.5
1.5
Unit
A
V
MHz
s
2SD1257
2SD1257A
*h
FE2 Rank classification
Rank
R
Q
P
hFE2
60 to 120
90 to 180
130 to 260
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
±0.2
6.0
±0.5
10.0
±0.3
10.5min.
2.0
1.5
±0.1
1.5max.
0.8
±0.1
5.08
±0.5
2.54
±0.3
1.1max.
0.5max.
1.0
±0.1
3.4
±0.3
2
13
Unit: mm
8.5
±0.2
4.4
±0.5
2.0
10.0
±0.3
14.7
±0.5
4.4
±0.5
6.0
±0.3
3.4
±0.3
2.54
±0.3
5.08
±0.5
1.0
±0.1
0.8
±0.1
1.5
+0
–0.4
3.0
+0.4
–0.2
0 to 0.4
1.1 max.
R0.5
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
Note)The part numbers in the parenthesis show conventional part number.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1258PQ | 1 A, 150 V, NPN, Si, POWER TRANSISTOR |
| 2SD1259P | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD1259O | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD1261Q | 4 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD1261P | 4 A, 60 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1257P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7A I(C) | TO-221VAR |
| 2SD1257Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7A I(C) | TO-221VAR |
| 2SD1257R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7A I(C) | TO-221VAR |
| 2SD1258 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR (I) |
| 2SD1258P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | TO-220VAR |
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