參數(shù)資料
型號(hào): 2SD1244
廠商: PANASONIC CORP
元件分類: 小信號(hào)晶體管
英文描述: Silicon NPN epitaxial planer type(For low-frequency power amplification)
中文描述: 3000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: M-A1, 3 PIN
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 40K
代理商: 2SD1244
1
Transistor
2SD1244
Silicon NPN epitaxial planer type
For low-frequency power amplification
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
Satisfactory operation performances at high efficiency with the
low-voltage power supply.
G
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
6.9
±
0.1
0.55
±
0.1
0.45
±
0.05
1
±
0
1
2.5
±
0.1
1.0
1.5
1.5 R0.9
R0.9
R07
0
0.85
3
±
0
2
±
0
2
±
0
1
±
0
4
±
0
4
±
0
2.5
2.5
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
40
20
7
8
5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 2A
*2
I
C
= 3A, I
B
= 0.1A
*2
V
CB
= 6V, I
E
= –50mA, f = 200MHz
V
CB
= 20V, I
E
= 0, f = 1MHz
min
20
7
230
150
typ
150
max
0.1
0.1
600
1
50
Unit
μ
A
μ
A
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank
Q
R
h
FE1
230 ~ 380
340 ~ 600
*2
Pulse measurement
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
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