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參數(shù)資料
| 型號(hào)： | 2SD1250A |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type(For power amplification) |
| 中文描述： | 2 A, 180 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 48K |
| 代理商： | 2SD1250A |
1
Power Transistors
2SD1250, 2SD1250A
Silicon NPN triple diffusion planar type
For power amplification
For TV vartical deflection output
Complementary to 2SB928 and 2SB928A
I
Features
G
High forward current transfer ratio h
FE
which has satisfactory linearity
G
Low collector to emitter saturation voltage V
CE(sat)
G
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
200
200
150
180
6
3
2
30
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SD1250
2SD1250A
2SD1250
2SD1250A
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
Conditions
V
CB
= 200V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 500
μ
A, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 500
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
V
CE
= 10V, I
C
= 400mA
V
CE
= 10V, I
C
= 400mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
min
200
150
180
6
60
50
typ
20
max
50
50
240
1
1
Unit
μ
A
μ
A
V
V
V
V
V
MHz
2SD1250
2SD1250A
*
h
FE1
Rank classification
Rank
Q
P
h
FE1
60 to 140
100 to 240
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
±
0.2
6.0
±
0.5
1
±
0
1
2
1
±
0
1.5max.
0.8
±
0.1
5.08
±
0.5
2.54
±
0.3
1.1max.
0.5max.
1.0
±
0.1
3.4
±
0.3
2
1
3
Unit: mm
3.4
±
0.3
8.5
±
0.2
4
±
0
2
1
±
0
1
±
0
4
±
0
6.0
±
0.3
2.54
±
0.3
5.08
±
0.5
1.0
±
0.1
0.8
±
0.1
1
+
–
3
+
–
0 to 0.4
1.1 max.
R0.5
R0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1251 | Silicon NPN triple diffusion junction type(For power amplification) |
| 2SD1251A | Silicon NPN triple diffusion junction type(For power amplification) |
| 2SD1252 | Silicon NPN triple diffusion planar type(For power amplification) |
| 2SD1253 | Silicon NPN triple diffusion planar type(For power amplification) |
| 2SD1256 | Silicon NPN epitaxial planar type(For power switching) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1250AP | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 2A I(C) | TO-221VAR |
| 2SD1250AQ | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 2A I(C) | TO-221VAR |
| 2SD1250P | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 2A I(C) | TO-221VAR |
| 2SD1250Q | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 2A I(C) | TO-221VAR |
| 2SD1251 | 制造商:KEXIN 制造商全稱(chēng):Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon NPN Triple Diffusion Junction Type |
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