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參數(shù)資料
| 型號： | 2SD1160 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, 2-7B1A, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 182K |
| 代理商： | 2SD1160 |
2SD1160
2006-11-21
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
―
1
A
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
2.5
6.25
15
mA
Collector-emitter sustaining voltage
VCEO (SUS) IC = 20 mA, L = 40 mH
20
―
V
hFE (1)
(Note)
VCE = 2 V, IC = 1 A
100
―
300
DC current gain
hFE (2)
VCE = 2 V, IC = 2 A
60
―
Collector emitter saturation voltage
VCE (sat)
IC = 2 A, IB = 40 mA
―
0.4
0.6
V
Base-emitter saturation voltage
VBE (sat)
IC = 2 A, IB = 40 mA
―
1.5
V
Emitter-collector forward voltage
VECF
IE = 1 A, IB = 0
―
2.0
V
Note: hFE (1) classification O: 100 to 200, Y: 150 to 300
Classification
Min
Max
2SD1160-O
100
200
2SD1160-Y
150
300
Marking
D1160
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics
indicator
Part No. (or abbreviation code)
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| 2SD1160 | 2000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1163A | 7 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1163 | 7 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1164-Z-T1K | 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1164-Z-T1L | 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1160_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT Process) |
| 2SD1160O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 2A I(C) | TO-251AA |
| 2SD1160Y | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 2A I(C) | TO-251AA |
| 2SD1160-Y(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SD1161 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 30MA I(C) | SOT-23 |
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