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參數(shù)資料
| 型號(hào)： | 2SD1141K |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管) |
| 中文描述： | 硅npn型三重?cái)U(kuò)散（三倍擴(kuò)散npn型晶體管） |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 20K |
| 代理商： | 2SD1141K |
2SD1141(K)
2
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
400
—
—
V
I
C
= 0.1 mA, I
E
= 0
Collector to emitter sustain
voltage
V
CEO(sus)
300
—
—
V
I
= 3 A, PW = 50 μs,
f = 50 Hz, L = 10 mH
Emitter to base breakdown
voltage
V
(BR)EBO
7
—
—
V
I
E
= 50 mA, I
C
= 0
Collector cutoff current
I
CEO
h
FE
V
CE(sat)
—
—
100
μA
V
CE
= 300 V, R
BE
=
∞
V
CE
= 2 V, I
C
= 4 A
I
C
= 4 A, I
B
= 40 mA
DC current transfer ratio
500
—
—
Collector to emitter saturation
voltage
—
—
1.5
V
Base to emitter saturation
voltage
V
BE(sat)
—
—
2.0
V
I
C
= 4 A, I
B
= 40 mA
Turn on time
t
on
t
off
—
2.0
—
μs
I
C
= 4 A, I
B1
= –I
B2
= 40 mA
I
C
= 4 A, I
B1
= –I
B2
= 40 mA
Turn off time
—
23
—
μs
See characteristics curves of 2SD1113(K).
60
40
20
0
50
100
150
C
C
Maximum Collector Dissipation Curve
Case Temperature T
C
(
°
C)
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| 2SD1142 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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