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參數(shù)資料
| 型號： | 2SD1138 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused |
| 中文描述： | 硅npn型三重擴散 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 31K |
| 代理商： | 2SD1138 |
2SD1138
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C (peak)
P
C
P
C
*
1
Tj
200
V
Collector to emitter voltage
150
V
Emitter to base voltage
6
V
Collector current
2
A
Collector peak current
5
A
Collector power dissipation
1.8
W
30
W
Junction temperature
150
°
C
°
C
Storage temperature
Note:
1. Value at T
C
= 25
°
C.
Tstg
–45 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
150
—
—
V
I
C
= 50 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
6
—
—
V
I
E
= 5 mA, I
C
= 0
Collector cutoff current
I
CBO
h
FE1
*
1
h
FE2
V
CE (sat)
—
—
1
μ
A
V
CB
= 120 V, I
E
= 0
V
CE
= 4 V, I
C
= 50 mA
V
CE
= 10 V, I
C
= 500 mA*
2
I
C
= 500 mA, I
B
= 50 mA*
2
DC current transfer ratio
60
—
320
60
—
—
Collector to emitter saturation
voltage
—
—
3.0
V
Base to emitter voltage
V
BE
Cob
—
—
1.0
V
V
CB
= 4 V, I
C
= 50 mA
V
CB
= 100 V, I
E
= 0, f = 1 MHz
Collector output capacitance
Note:
1. The 2SD1138 is grouped by h
FE1
as follows.
2. Pulse test.
—
20
—
pF
B
C
D
60 to 120
100 to 200
160 to 320
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1138B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SD1138C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SD1138C(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1138D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SD1139 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220 |
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